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19 November 2007 Option of resolution enhancement technology in advanced lithography
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Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67240G (2007) https://doi.org/10.1117/12.782511
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Hyper-numerical aperture ArF scanner has being designed to meet the needs of 45nm node. Resolution enhancement technology, such as phase shift mask, off-axis illumination, and innovation processing technology must be employed in hyper-numerical aperture ArF lithography. However the cross talk of phase shift mask, off axis illumination, polarization effect, and resist stack impacts lithography performance significantly. Option of resolution enhancement technology is presented in conjunction with optimal dual-layers bottom anti-refactive coating and polarized illumination by our program and Prolith 9.0. Multi options of resolution enhancement technology are obtained to maintain a small CD, good CD uniformity (CDU), reasonable process window (PW) and fidelity of resist profile.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanqui Li and Yuan Zhou "Option of resolution enhancement technology in advanced lithography", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240G (19 November 2007); https://doi.org/10.1117/12.782511
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