Back-illuminated GaN/AIGaN visible-blind photodiodes

Liang Chen; Jun Chen; Yun Bai; Liwei Guo; Yan Zhang; Xiangyang Li; Haimei Gong

doi:10.1117/12.782514

19 November 2007 Back-illuminated GaN/AlGaN visible-blind photodiodes

Liang Chen, Jun Chen, Yun Bai, Liwei Guo, Yan Zhang, Xiangyang Li, Haimei Gong

Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67240I (2007) https://doi.org/10.1117/12.782514
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

In recent years, AlGaN semiconductor alloys, with a direct bandgap tunable between 3.4eV and 6.2eV, become the most suitable material for fabricating UV detectors. In this paper, a backside-illuminated visible-blind UV detector based on a GaN/AlGaN p-i-n heterostructure has been successfully fabricated and tested. The p-i-n photodiode structure consists of a 0.7um n-type Al_0.33Ga_0.67N:Si layer grown by metal-organic chemical vapor deposition (MOCVD) onto a low temperature AlN buffer layer on a polished sapphire substrate. On the top of this layer there is a 0.18um undoped GaN active layer and a 0.15um p-type GaN:Mg top layer. Square mesas of area A=1.70×10^-3cm² were obtained by inductively coupled plasma etching using BCl₃, Ar and Cl₂. Standard photolithographic and metallization procedures were also employed to fabricate the devices. The visible blind photodiode exhibits a narrow UV spectral responsibility band peaked at 360nm, with maximum responsibility R=0.21A/W, corresponding to an internal quantum efficiency of 82%. R₀A values up to 2.64×10⁸Ω•cm² were obtained, corresponding to D*=2.65×10¹³ cmHz^1/2W^-1 at 360nm. The leakage current at zero bias is 5.20×10^-13A. We also examined GaN/AlGaN epitaxial layers by high resolution X-ray diffraction (HRXRD). The rocking curve indicates the multiple layers including p-type layer are in good state, which indicates that the crystalline quality of films is the key of device performances.

Citation Download Citation

Liang Chen, Jun Chen, Yun Bai, Liwei Guo, Yan Zhang, Xiangyang Li, and Haimei Gong "Back-illuminated GaN/AlGaN visible-blind photodiodes", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240I (19 November 2007); https://doi.org/10.1117/12.782514

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KEYWORDS

Photodiodes

Ultraviolet radiation

Ultraviolet detectors

Sensors

Gallium nitride

Heterojunctions

X-ray diffraction

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