19 November 2007 Simulation for effect of process parameters on surface profile in thick film photolithography
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Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67240T (2007); doi: 10.1117/12.782692
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
The microstructure with high fidelity is very important while being used as micro-optical component, because the performance tightly depends on the profile quality of microstructure. Optical lithography method based on thick film resist plays an increasing important role in fabrication for microstructure. However, the profile quality of the microstructure is greatly affected by process parameters adopted in the experiment. In this paper, the effect of illumination wavelength, gap distance and absorption coefficient on the profile quality after development has been simulated, analyzed and discussed in detail, by using the model for thick film lithography. The simulated results show that these process parameters have a great impact on the profile quality of microstructures, which it is helpful for process optimization and profile control of thick film photolithography.
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Xionggui Tang, Heping Li, Jingkun Liao, Yongzhi Liu, Yongkang Guo, "Simulation for effect of process parameters on surface profile in thick film photolithography", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240T (19 November 2007); doi: 10.1117/12.782692; https://doi.org/10.1117/12.782692
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KEYWORDS
Lithography

Photoresist developing

Photoresist materials

Refractive index

Absorption

Optical lithography

Lithographic illumination

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