Electron beam lithography (EBL) will be used to pattern an Extreme Ultraviolet (EUV) mask. Both forward scattering
electrons and backscattering electrons contribute to the energy deposition in resist, which is directly related to the pattern
profile. When the exposure conditions, development conditions and the thickness and material of absorber, buffer,
capping, and substrate are determined, the structure of molybdenum/silicon (Mo/Si) multilayer become the exclusive
factor to influent the EUV mask fabrication. Several researchers have investigated the influence of the number of
repeated Mo/Si layer and their thickness on the backscattering coefficient and the deposited energy in the resist.
However the secondary electron generation and tracking is not implemented. Furthermore, the characters of pattern
profile were not analyzed. In this paper, EBL module of in house software MicroCruiser, which included the secondary
electrons and relativistic correction of high energy electron, was used to study the impact of structure of Mo/Si
multilayer on the mask fabrication by EBL. Energy distribution in resist, backscattering coefficient (BSC), and the
pattern profile had been investigated. The results show that with the number of Mo/Si repeated layers increases, the BSC
decrease and the line edge of pattern profile is much smoother.