30 October 2007 CD bias control with in-situ plasma treatment in EPSM photomask etch
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Proceedings Volume 6730, Photomask Technology 2007; 67300A (2007); doi: 10.1117/12.746772
Event: SPIE Photomask Technology, 2007, Monterey, California, United States
Abstract
As mask feature size decreases, etch bias control during Cr and shifter etch becomes more critical factor in Embedded Phase Shifter Mask (EPSM) mask making processes. Since the etching characteristics of the shifter materials, Molybdenum Silicide (MoSi), are sensitive to etching surface condition, Critical Dimension (CD) performance of the shifter layer strongly depends on incoming surface condition from Cr etch. In this paper, lateral etch component of MoSi etch was investigated as a function of various substrate conditions so that a new in-situ plasma treatment was suggested to control the CD bias during MoSi etch. The CD performance was characterized within the surface treatment plasmas and also correlated with some plasma parameters and substrate temperature. As a result, it was found that plasma surface modification could be an in-situ technique to better control the shifter CD in EPSM process and an essential option for redundancy tools in mask production environment.
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Karmen Yung, Chang-Ju Choi, Ki-Ho Baik, "CD bias control with in-situ plasma treatment in EPSM photomask etch", Proc. SPIE 6730, Photomask Technology 2007, 67300A (30 October 2007); doi: 10.1117/12.746772; https://doi.org/10.1117/12.746772
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KEYWORDS
Etching

Photomasks

Oxygen

Chromium

Critical dimension metrology

Plasma

Plasma treatment

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