30 October 2007 Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems
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Abstract
The purpose of paper is to investigate the impact of mask blank flatness on critical dimension uniformity (CDU) and depth of focus (DOF) in the wafer printing process with a test pattern designed for 65nm node technology. In this experiment we use 3 test masks with different flatness (0.3T, 0.5T and 1T), and the same test pattern array. The mask flatness was measured with a Tropel® UltraFlatTM 200, and the focus error is extracted from the CD data of the focus and energy matrix (FEM) analysis. The goal of the study is to quantify the mask flatness influence on the high-numerical aperture (NA) lithographic process.
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Christopher Lee, Christopher Lee, Chia Wen Chang, Chia Wen Chang, Tomas Chin, Tomas Chin, Richard Lu, Richard Lu, Steven Fan, Steven Fan, Derek Chen, Derek Chen, Gordon Chan, Gordon Chan, Torey Huang, Torey Huang, "Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems", Proc. SPIE 6730, Photomask Technology 2007, 67300D (30 October 2007); doi: 10.1117/12.746614; https://doi.org/10.1117/12.746614
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