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30 October 2007 Litho-aware extraction for the 32nm double patterning node
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A methodology to predict the impact of mask overlay and litho-induced process variations on Statistical Timing for Double Patterning is presented. As we migrate to the 32nm node and Double Patterning techniques, Mask Makers, Ebeam providers and Scanner providers are given very aggressive requirements for maintaining overlay accuracy. This method takes into account Mask CD Uniformity and Mask Image placement error budgets presented in the 2006 ITRS. It is assumed the ITRS requirements are met. This methodology combines the infrastructure used in Single Exposure Litho-Aware Layout Implementation tools with Double Patterning decomposition results to determine a meaningful layout-specific analysis for pre-tape-out timing sign-off. Traditional timing analysis uses a set of look-up tables for simulating device distortions. These tables have been proven to require excessive guardbanding in Single Exposure masks. Adding the additional dimension of overlay distortion to these tables will have the effects of hiding parametric failures, or requiring excessive guardbanding to ensure timing predictability. Results will be shown that describe the timing effects with and without taking into account these distortions, as well as design samples that contribute to these distortions.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Judy Huckabay, Quentin Chen, Craig Thayer, and Robert Naber "Litho-aware extraction for the 32nm double patterning node", Proc. SPIE 6730, Photomask Technology 2007, 67300W (30 October 2007);

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