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16 November 2007 Impact of mask absorber properties on printability in EUV lithography
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Abstract
The impact of mask absorber properties on printability in EUV lithography was studied from the viewpoint of lithographic requirements which can give high imaging contrast and reduce the shadowing effect. By using the refractive indices of the elements and compounds employed as absorbers, their reflectivity on multilayer blanks, aerial image on wafer plane and printed CDs depending on absorber thicknesses were simulated. This predicted an optimum Ta-based absorber's thickness. Several patterned masks of LR-TaBN absorber with various thicknesses were prepared. Each patterned mask was exposed with the newly developed small-field-exposure-tool (SFET). It was demonstrated that optimized absorber thickness can, without loss of printability performance, reduce CD difference between horizontal and vertical pattern that has been known to be caused by shadowing effect.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, and Osamu Suga "Impact of mask absorber properties on printability in EUV lithography", Proc. SPIE 6730, Photomask Technology 2007, 673017 (16 November 2007); doi: 10.1117/12.746550; https://doi.org/10.1117/12.746550
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