16 November 2007 Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning
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Abstract
To fulfill Moore's law the R&D stage of 3x nm HP nodes will have to be reached in 2008. Conventional DUV immersion technology is resolution limited to half pitch values exceeding 40 nm. Double Patterning Technology (DPT) is a major candidate to reach the 3x nm node in time. Geometrical pattern split, doubling the pitch, is one of the major steps of DPT. We present a feasibility study of the Rule Based (RB) DPT approach to pattern splitting based on a representative and reviewed selection of clips and full-mask designs.
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Anton van Oosten, Anton van Oosten, Peter Nikolsky, Peter Nikolsky, Judy Huckabay, Judy Huckabay, Ronald Goossens, Ronald Goossens, Robert Naber, Robert Naber, } "Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning", Proc. SPIE 6730, Photomask Technology 2007, 67301L (16 November 2007); doi: 10.1117/12.746689; https://doi.org/10.1117/12.746689
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