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30 October 2007 Advanced mask particle cleaning solutions
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Abstract
The majority of trends in lithography technology necessitate the use of smaller, higher aspect, patterns on photomasks which are increasingly sensitive to traditional cleaning processes. Particle defects are of increasing concern since, in deep and even overhanging structures, they can become fixed to the surface with such strength that any traditional cleaning technique would destroy any small, high-aspect, mask structures. A series of advanced new solutions are presented here which have been shown to remove these types of problem particles as applied to 45 nm node nanomachining mask repair with a RAVE nm450 system. In the first method, a cryogenic cleaning system is modified to greatly enhance selective removal of nanoparticles from high aspect structures. In the second method, the nm450 repair tool itself is applied to selectively remove targeted particles from a nanoscale area of the mask surface thus only affecting the region of interest and not touching any sensitive surrounding surfaces or structures.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tod Robinson, Andrew Dinsdale, Ron Bozak, and Bernie Arruza "Advanced mask particle cleaning solutions", Proc. SPIE 6730, Photomask Technology 2007, 67301Y (30 October 2007); https://doi.org/10.1117/12.746748
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