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30 October 2007 The improvement of OPC accuracy and stability by the model parameters' analysis and optimization
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The OPC model is very critical in the sub 45nm device because the Critical Dimension Uniformity (CDU) is so tight to meet the device performance and the process window latitude for the production level. The OPC model is generally composed of an optical model and a resist model. Each of them has physical terms to be calculated without any wafer data and empirical terms to be fitted with real wafer data to make the optical modeling and the resist modeling. Empirical terms are usually related to the OPC accuracy, but are likely to be overestimated with the wafer data and so those terms can deteriorate OPC stability in case of being overestimated by a small cost function. Several physical terms have been used with ideal value in the optical property and even weren't be considered because those parameters didn't give a critical impact on the OPC accuracy, but these parameters become necessary to be applied to the OPC modeling at the low k1 process. Currently, real optic parameter instead of ideal optical parameter like the laser bandwidth, source map, pupil polarization including the phase and intensity difference start to be measured and those real measured value are used for the OPC modeling. These measured values can improve the model accuracy and stability. In the other hand these parameters can make the OPC model to overcorrect the process proximity errors without careful handling. The laser bandwidth, source map, pupil polarization, and focus centering for the optical modeling are analyzed and the sample data weight scheme and resist model terms are investigated, too. The image blurring by actual laser bandwidth in the exposure system is modeled and the modeling result shows that the extraction of the 2D patterns is necessary to get a reasonable result due to the 2D patterns' measurement noise in the SEM. The source map data from the exposure machine shows lots of horizontal and vertical intensity difference and this phenomenon must come from the measurement noise because this huge intensity difference can't be caused by the scanner system with respect to the X-Y intensity difference specification in the scanner. Therefore this source map should be well organized for the OPC modeling and a manipulated source map improves the horizontal and vertical mask bias and even OPC convergence. The focus parameter which is critical for the process window OPC and ORC should be matched to the tilted Bossung plot which is caused by uncorrectable aberration to predict the CD change in the through focus with a new devised method. Pupil polarization data can be applied into the OPC modeling and this parameter is also used for the unpolarized source and the polarized source and specially this parameter helps Apodization loss to be 0 and is evaluated for the effect into the modeling. With the analysis and optimization about the model parameters the robust model is achieved in the sub 45nm device node.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
No-Young Chung, Woon-Hyuk Choi, Sung-Ho Lee, Sung-Il Kim, and Sun-Yong Lee "The improvement of OPC accuracy and stability by the model parameters' analysis and optimization", Proc. SPIE 6730, Photomask Technology 2007, 67302J (30 October 2007);


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