30 October 2007 2D measurement using CD SEM for arbitrarily shaped patterns
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As the design rule of lithography becomes smaller, accuracy and precision in Critical Dimension (CD) and controllability of pattern-shape are required in semiconductor production. Critical Dimension Scanning Electron Microscope (CD SEM) is an essential tool to confirm the quality of the mask such as CD control, CD uniformity and CD mean to target (MTT). Unfortunately, in the case of extremely rounded region of arbitrary enclosed patterns, CD fluctuation depending on Region of Interest (ROI) is very serious problem in Mask CD control, so that it decreases the yield. In order to overcome this situation, we have been developing 2-dimensonal (2D) method with system makers and comparing CD performance between mask and wafer using enclosed arbitrary patterns. In this paper, we summarized the results of our evaluation that compare error budget between 1-dimensonal (1D) and 2D data using CD SEM and other optical metrology systems.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyung-Joo Lee, Hyung-Joo Lee, So-Yoon Bae, So-Yoon Bae, Dong-Hoon Chung, Dong-Hoon Chung, Sang-Gyun Woo, Sang-Gyun Woo, HanKu Cho, HanKu Cho, Jun Matsumoto, Jun Matsumoto, Takayuki Nakamura, Takayuki Nakamura, Dong Il Shin, Dong Il Shin, TaeJun Kim, TaeJun Kim, } "2D measurement using CD SEM for arbitrarily shaped patterns", Proc. SPIE 6730, Photomask Technology 2007, 673037 (30 October 2007); doi: 10.1117/12.746453; https://doi.org/10.1117/12.746453

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