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1 November 2007 Critical dimension control for 32 nm random contact hole array with resist reflow process
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Abstract
50 nm random contact hole array by resist reflow process (RRP) was studied to make 32 nm node device. Patterning of smaller contact hole array is harder than patterning the line and space. RRP has a lot of advantages, but RRP strongly depends on pattern array, pitch, and shape. Thus, we must have full knowledge for pattern dependency after RRP, and then we need to have optimum optical proximity corrected mask including RRP to compensate the pattern dependency in random array. To make optimum optical proximity and RRP corrected mask, we must have better understanding that how much resist flows and where the contact hole locations are after RRP. A simulation is made to correctly predict RRP result by including the RRP parameters such as viscosity, adhesion force, surface tension and location of the contact hole. As a result, we made uniform 50 nm contact hole patterns even for the random contact hole array and for different shaped contact hole array by optical proximity corrected RRP.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joon-Min Park, Young-Min Kang, Seung-Wook Park, Joo-Yoo Hong, and Hye-Keun Oh "Critical dimension control for 32 nm random contact hole array with resist reflow process", Proc. SPIE 6730, Photomask Technology 2007, 673043 (1 November 2007); https://doi.org/10.1117/12.746518
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