1 November 2007 A study of haze generation as thin film materials
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Abstract
For high quality products in the semiconductor and photomask industries, exposure wavelength has been shortening from i-line to ArF to embody the high resolution as critical dimension (CD) shrinkage and the specifications have been restricted. However, a new defect issue called haze has appeared that is shortening the wavelength. This defect is caused by the photoreaction of chemical residues exposed to SO4 2-, NH4 + and other chemicals. Accordingly, in this paper we investigated the generation of haze in thin film materials. For fabrication of various thin films, the materials which were metal, compound material without nitrogen, and compound material with nitrogen, were deposited on a quartz substrate using sputtering. Then, we chemically treated the thin film materials using various conditions including sulfuric peroxide mixture (SPM) and standard cleaning (SC-1). First, the concentration of ions on the thin film materials was measured using ion chromatography (IC) analysis. Second, haze defects were inspected after exposure in order to evaluate the difference in haze generation on the thin film materials. Also, we investigated the numbers and shape of the occurrences of haze.
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Ju-Hyun Kang, Ju-Hyun Kang, Han-Sun Cha, Han-Sun Cha, Sin-Ju Yang, Sin-Ju Yang, Chul-Kyu Yang, Chul-Kyu Yang, Jin-Ho Ahn, Jin-Ho Ahn, Kee-Soo Nam, Kee-Soo Nam, Jong-Min Kim, Jong-Min Kim, Manish Patil, Manish Patil, Ik-Bum Hur, Ik-Bum Hur, Sang-Soo Choi, Sang-Soo Choi, } "A study of haze generation as thin film materials", Proc. SPIE 6730, Photomask Technology 2007, 67304K (1 November 2007); doi: 10.1117/12.746684; https://doi.org/10.1117/12.746684
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