1 November 2007 Model-based mask verification
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Abstract
One of the most critical points for accurate OPC is to have accurate models that properly simulate the full process from the mask fractured data to the etched remaining structures on the wafer. In advanced technology nodes, the CD error budget becomes so tight that it is becoming critical to improve modeling accuracy. Current technology models used for OPC generation and verification are mostly composed of an optical model, a resist model and sometimes an etch model. The mask contribution is nominally accounted for in the optical and resist portions of these models. Mask processing has become ever more complex throughout the years so properly modeling this portion of the process has the potential to improve the overall modeling accuracy. Also, measuring and tracking individual mask parameters such as CD bias can potentially improve wafer yields by detecting hotspots caused by individual mask characteristics. In this paper, we will show results of a new approach that incorporates mask process modeling. We will also show results of testing a new dynamic mask bias application used during OPC verification.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Foussadier, Frank Sundermann, Anthony Vacca, Jim Wiley, George Chen, Tadahiro Takigawa, Katsuya Hayano, Syougo Narukawa, Satoshi Kawashima, Hiroshi Mohri, Naoya Hayashi, Hiroyuki Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J.L. Di-Maria, Vincent Farys, "Model-based mask verification", Proc. SPIE 6730, Photomask Technology 2007, 673051 (1 November 2007); doi: 10.1117/12.752609; https://doi.org/10.1117/12.752609
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