30 October 2007 A study of precision performance and scan damage of EUV masks with the LWM9000 SEM
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Proceedings Volume 6730, Photomask Technology 2007; 67305H (2007); doi: 10.1117/12.746373
Event: SPIE Photomask Technology, 2007, Monterey, California, United States
Abstract
EUV mask is a reflection-type-mask, of which film and structure are very different from those of existing masks (e.g. Cr and MoSi). LWM9000 SEM of Vistec/Advantest was used for measurement of EUV masks. Two types of EUV masks were used to investigate static and dynamic measurement precision and the impact of charge-up by e-beam irradiation during measurement. An optional function of LWM9000 SEM was used to improve static precision. Because the LWM9000 SEM uses ozone for in-situ cleaning of the work chamber, the interaction between the electron beam and ozone presence was also investigated. The EUV mask was evaluated at the EUV wavelength before and after e-beam scanning and measurements to determine any changes in reflectance.
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Isao Yonekura, Hidemitsu Hakii, Takashi Yoshii, Yoshiyuki Negishi, Katsumi Oohira, Koichirou Kanayama, Masashi Kawashita, Yo Sakata, Keishi Tanaka, "A study of precision performance and scan damage of EUV masks with the LWM9000 SEM", Proc. SPIE 6730, Photomask Technology 2007, 67305H (30 October 2007); doi: 10.1117/12.746373; https://doi.org/10.1117/12.746373
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KEYWORDS
Extreme ultraviolet

Scanning electron microscopy

Reflectivity

Chromium

Time metrology

Ozone

Precision measurement

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