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30 October 2007 EUV mask process development using DUV inspection system
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As the design rule continues to shrink towards 3x nm and below, lithographers are searching for new and advanced methods of mask lithography such as immersion, double patterning and extreme ultraviolet lithography (EUVL). EUV lithography is one of the leading candidates for the next generation lithography technologies after 193 nm immersion and many mask makers and equipment makers have focused on stabilizing the process. With EUV lithography just around the corner, it is crucial for advanced mask makers to develop and stabilize EUV mask processes. As a result, an inspection tool is required to monitor and provide quick feedback to each process step.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Kim, Venu Vellanki, William Huang, Andrew Cao, Chunlin Chen, Aditya Dayal, Paul Yu, Ki Hun Park, Yumiko Maenaka, Kazuko Jochi, and Gregg Inderhees "EUV mask process development using DUV inspection system", Proc. SPIE 6730, Photomask Technology 2007, 67305M (30 October 2007);

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