9 August 2007 Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
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Proceedings Volume 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems; 673103 (2007) https://doi.org/10.1117/12.751770
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus
Abstract
Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.
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K. S. Borschev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, D. A. Vinokurov, I. N. Arsentyev, I. S. Tarasov, "Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping", Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 673103 (9 August 2007); doi: 10.1117/12.751770; https://doi.org/10.1117/12.751770
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