Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping

K. S. Borschev; N. A. Pikhtin; S. O. Slipchenko; Z. N. Sokolova; D. A. Vinokurov; I. N. Arsentyev; I. S. Tarasov

doi:10.1117/12.751770

9 August 2007 Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping

K. S. Borschev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, D. A. Vinokurov, I. N. Arsentyev, I. S. Tarasov

Author Affiliations +

Proceedings Volume 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems; 673103 (2007) https://doi.org/10.1117/12.751770
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus

Abstract

Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.

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K. S. Borschev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, D. A. Vinokurov, I. N. Arsentyev, and I. S. Tarasov "Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping", Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 673103 (9 August 2007); https://doi.org/10.1117/12.751770

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