9 August 2007 New physical features of semiconductor lasers at superhigh excitation levels
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Proceedings Volume 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems; 673104 (2007) https://doi.org/10.1117/12.751854
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus
Abstract
Investigations of stimulated recombination processes and reasons of output optical power saturation at superhigh pump levels (up to 0.1 MA/cm2) of semiconductor lasers based on wide variety of quantum well heterostructures (&lgr;=980- 1900 nm) are presented for the first time.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Lyutetskiy, A. V. Lyutetskiy, N. A. Pikhtin, N. A. Pikhtin, S. O. Slipchenko, S. O. Slipchenko, Z. N. Sokolova, Z. N. Sokolova, A. L. Stankevich, A. L. Stankevich, D. A. Vinokurov, D. A. Vinokurov, K. S. Borschev, K. S. Borschev, I. S. Tarasov, I. S. Tarasov, "New physical features of semiconductor lasers at superhigh excitation levels", Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 673104 (9 August 2007); doi: 10.1117/12.751854; https://doi.org/10.1117/12.751854
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