9 August 2007 Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices
Author Affiliations +
Proceedings Volume 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems; 67310A (2007) https://doi.org/10.1117/12.751890
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus
Abstract
Reactively co-sputtered amorphous Al2O3 waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such Al2O3 films, the etching behaviour of Al2O3 has been investigated using an inductively coupled reactive ion etch system. The etch rate of Al2O3 and possible mask materials was studied by applying various common process gases and combinations of these gases, including CF4/O2, BCl3, BCl3/HBr and Cl2. Based on a comparison of the etch rates and patterning feasibility of the different mask materials, a BCl3/HBr plasma and and standard resist mask were used to fabricate channel waveguide structures. The etched structures exhibit straight sidewalls with minimal roughness and etch depths of up to 530 nm, sufficient for defining waveguides with strong optical confinement and low bending losses. Low additional propagation losses were measured in single-mode Al2O3 ridge waveguides defined using the developed etch process. In initial investigations, Al2O3:Er layers fabricated using the same deposition method applied for the undoped layers show typical emission cross-sections, low green upconversion luminescence and lifetimes up to 7 ms.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan D. B. Bradley, Jonathan D. B. Bradley, Feridun Ay, Feridun Ay, Tom Blauwendraat, Tom Blauwendraat, Kerstin Wörhoff, Kerstin Wörhoff, Markus Pollnau, Markus Pollnau, } "Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices", Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 67310A (9 August 2007); doi: 10.1117/12.751890; https://doi.org/10.1117/12.751890
PROCEEDINGS
8 PAGES


SHARE
Back to Top