8 October 2007 Simulation of MWIR and LWIR photodiodes based on n+-p and p-n junctions formed in HgCdTe heterostructures
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Abstract
Realization of affordable large format high performance photovoltaic (PV) infrared (IR) Hg1-xCdxTe based focal plane arrays (FPA) covering spectral ranges Mid-Wave (MWIR) from 3 to 5.5 μm and extended Long-Wave (LWIR) from 8 to 14 μm requires comprehensive estimation of photodiodes performance depending on Hg1-xCdxTe material properties and operating conditions. Advanced Infrared Focal Plane Arrays include Mid-Wave (MWIR) 3-5.5 μm operating at temperatures Top=80-100 K and at higher temperatures (HOT) Top=200-240 K, extended Long-Wave (LWIR) 8-14 μm operating at temperatures Top=80-100 K and multi-color arrays. Perhaps novel FPA will be based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is desirable for proper multiplexing of PD arrays to Silicon Read-out Integrated Circuits (ROICs). Comparative analysis of LWIR PD performance at 80 K and 100 K is needed also due to strong tendency to lowering weight and power consumption of perspective megapixel FPA. Objective of the present work was to calculate Hg1-xCdxTe MWIR and LWIR PV FPA (λp equals to 4.5-4.8 μm at Top=225 K responding 2-3 stages thermal electric cooler temperature and 8.0-9.0 and 10.0-10.5 μm at Top=80-100 K) performance variation with doping level, absorber thickness, surface recombination rate and operating temperature.
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Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, and Mikhail S. Nikitin "Simulation of MWIR and LWIR photodiodes based on n+-p and p-n junctions formed in HgCdTe heterostructures", Proc. SPIE 6737, Electro-Optical and Infrared Systems: Technology and Applications IV, 673714 (8 October 2007); doi: 10.1117/12.736830; https://doi.org/10.1117/12.736830
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