10 October 2007 Mid-infrared InAsSbP/InAsSb quantum well laser diodes
Author Affiliations +
Abstract
This paper describes the characteristics of a separate confinement heterostructure laser design based on type-I InAsSbP/InAsSb multiple quantum wells (MQW). An 8×8 band k.p method was used to calculate the band structure. The optical gain of the active region containing InAsSb QW was calculated using a free carrier gain model. Other properties such as behavior of the fundamental optical TE mode and refractive index profile were also determined. These were used for simulation of the resulting device properties and to estimate the threshold modal gain and threshold current density for the InAsSb MQW laser. Suitable InAsSbP cladding layer and waveguide/barrier materials have been determined. The strain, critical thickness, band offset, optical gain, Auger coefficient and threshold current density have been calculated at various Sb contents (x). The lowest current density is found for the composition range between 0.12-2.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Min Yin, Min Yin, Anthony Krier, Anthony Krier, } "Mid-infrared InAsSbP/InAsSb quantum well laser diodes", Proc. SPIE 6738, Technologies for Optical Countermeasures IV, 673808 (10 October 2007); doi: 10.1117/12.737805; https://doi.org/10.1117/12.737805
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT


Back to Top