This paper describes the characteristics of a separate confinement heterostructure laser design based on type-I
InAsSbP/InAsSb multiple quantum wells (MQW). An 8×8 band k.p method was used to calculate the band structure.
The optical gain of the active region containing InAsSb QW was calculated using a free carrier gain model. Other
properties such as behavior of the fundamental optical TE mode and refractive index profile were also determined. These
were used for simulation of the resulting device properties and to estimate the threshold modal gain and threshold current
density for the InAsSb MQW laser. Suitable InAsSbP cladding layer and waveguide/barrier materials have been
determined. The strain, critical thickness, band offset, optical gain, Auger coefficient and threshold current density have
been calculated at various Sb contents (x). The lowest current density is found for the composition range between