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16 October 2007 Space-and-time current spectroscopy of wide-gap semiconductors
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Abstract
We report the excitation of the non-steady-state photoelectromotive force (photo-EMF) in high-resistance wide-gap materials: layered boron nitride (BN), GaN nanoparticles in porous glasses, polypyrrole nanostructures in chrysotile asbestos matrix. The non-steady-state photo-EMF appears in semiconductor material illuminated by an oscillating interference pattern. Non-uniform illumination gives rise to the photoconductivity and space charge gratings which periodically shift with respect to each other resulting in an alternating photocurrent. Since the conductivity and space charge take part in current generation a number of photoelectric parameters can be measured: Maxwell relaxation time, lifetime, diffusion length and mobility of carriers, concentration of impurity centers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor Sokolov and Mikhail Bryushinin "Space-and-time current spectroscopy of wide-gap semiconductors", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400B (16 October 2007); https://doi.org/10.1117/12.737268
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