16 October 2007 Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources
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Abstract
Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers into spectral ranges where lasers do not exist or perform poorly. The availability of efficient quasi-phasematched infrared materials is thus considered as important for the development of several defense optronics applications. This paper will review the recent progresses we achieved with thick Orientation Patterned-GaAs structures. We will present results obtained in growing thick-layer (500 µm) on 2 cm long structures with very low optical losses (less than 0.02 cm-1). This loss coefficient is low enough to allow the realization of a high power OPO in the MIR band.
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David Faye, David Faye, Eric Lallier, Eric Lallier, Arnaud Grisard, Arnaud Grisard, Bruno Gérard, Bruno Gérard, Christelle Kieleck, Christelle Kieleck, Antoine Hirth, Antoine Hirth, } "Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400I (16 October 2007); doi: 10.1117/12.737110; https://doi.org/10.1117/12.737110
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