Translator Disclaimer
16 October 2007 The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors
Author Affiliations +
Abstract
We report measurements on a series of quantum dot infrared photodetectors grown with different combinations of monolayer thicknesses (2.2. 2.55 and 2.9 ML) and quantum dot layer sheet doping densities (6×1010 cm-2 and 12×1010 cm-2). The dark current and noise current were higher in devices grown with sheet doping density of 12×1010 cm-2. At a given bias voltage the dark current and the noise current was found to be lowest in devices having 2.55 ML and sheet doping density of 6×1010 cm-2. This combination gives a sheet doping density to dot density ratio of approximately unity. Highest gain was achieved in devices with 2.55 ML and sheet doping density of 6×1010 cm-2.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John P. R. David, Mark Hopkinson, Luke Wilson, and Pantelis Aivaliotis "The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400J (16 October 2007); https://doi.org/10.1117/12.740701
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top