16 October 2007 Simulation of a small Si plate oxidation in a cwCO2 laser light
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In the framework of a nonisothermal model it is shown that in the spot of cwCO2 laser of power P the temperature of a small bare Si plate increases from T'=300[K] to an equilibrium temperature T0(P). The moment of time t1(P) at which T0(P) is achieved, t0(P) at which the oxide layer of 1 nm is formed, the sample temperature at t0(P), the oxide layer thickness at t1(P), the oxide layer growth rate at t0(P), and t1(P) are computed, for dry and wet oxidation and for <100> and <111> oriented samples. How well the computed results are in agreement with the experimental results depends on the magnitude of the effect of the processes which were not incorporated in the model. The advantage of this analysis is the possibility to obtain explicit results from which the limits of the model can be specified and special results can be gleaned. With this aim this study was undertaken.
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Stefan Balint, Stefan Balint, Agneta M. Balint, Agneta M. Balint, Robert Szabo, Robert Szabo, } "Simulation of a small Si plate oxidation in a cwCO2 laser light", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400K (16 October 2007); doi: 10.1117/12.738259; https://doi.org/10.1117/12.738259

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