Translator Disclaimer
Paper
15 November 2007 Al2-X MeX (WO4)3 single crystal, Me=Sc, Y, Ga and In, as a new tunable laser media
Author Affiliations +
Abstract
The crystallization conditions of Al2(WO4)3 from Li2O-WO3 solvents (molar ratio 30.0:70.0, 32.5:67.5, 35.0:65.0, 45.0:55.0 and 55.0:45.0) as well as from Na2O-WO3 solvents (molar ratio 25.0:75.0, 27.5:72.5, 30.0:70.0 and 32.5:67.5) have been investigated. The concentration and temperature regions of crystallization of Al2(WO4)3 and the density, viscosity as well as the solution losses due to evaporation have been established. On the basis of the data obtained it has been concluded that the most suitable solvent for growing Al2(WO4)3 single crystals is Na2O-WO3 with a molar ratio of 27.5:72.5. The temperature and concentration regions of crystallization of Al2-xMex(WO4)3 solid solutions obtained by replacement of Al2O3 in the Na2O-Al2O3-WO3 system by Ga2O3, In2O3, Sc2O3 or Y2O3 have been investigated. The crystallization regions and concentration boundaries of existence of the solutions are found to depend strongly on the nature of the replacing element. Solid solutions containing Sc and In crystallize from high-temperature solutions with a lower concentration as compared to that of pure Al2(WO4)3, this being accompanied by a high distribution coefficient of the substituting ion. On the contrary, Ga and Y containing solid solutions crystallize from high-temperature solutions with much higher concentrations, the distribution coefficient of the substituting ions being relatively low. The experimental obtained data are the basis for growing bulk single crystals with preset compositions from the Al2-X MeX (WO4)3, Me=Sc, Y, Ga or In, solid solutions.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donka Ivanova, Velin Nikiolov, and Pavel Peshev "Al2-X MeX (WO4)3 single crystal, Me=Sc, Y, Ga and In, as a new tunable laser media", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400N (15 November 2007); https://doi.org/10.1117/12.736831
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Diode-pumped Cr-doped ZnMnSe and ZnMgSe lasers
Proceedings of SPIE (December 01 2017)
Novel Cr4+- Based Tunable Solid-State Lasers
Proceedings of SPIE (February 01 1992)
Cr4+ doped crystals for laser applications
Proceedings of SPIE (August 13 1993)

Back to Top