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25 September 2007 Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection
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Abstract
Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an InP substrate. The structure contains a AlAs/In0.53Ga0.47As/AlAs quantum well with InAs quantum dots grown on the top AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about 0.35%±0.07% with a dark count rate of 1.58×10-6 ns-1. This corresponds to an internal efficiency of 6.3%.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. W. Li, P. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, and A. J. Shields "Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660N (25 September 2007); https://doi.org/10.1117/12.737307
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