12 October 2007 A 130-nm CMOS single-photon avalanche diode
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The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cristiano Niclass, Cristiano Niclass, Marek Gersbach, Marek Gersbach, Robert Henderson, Robert Henderson, Lindsay Grant, Lindsay Grant, Edoardo Charbon, Edoardo Charbon, } "A 130-nm CMOS single-photon avalanche diode", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 676606 (12 October 2007); doi: 10.1117/12.728878; https://doi.org/10.1117/12.728878

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