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12 October 2007 Analysis of wavelength-dependent performance variations of GaN-based ultraviolet lasers
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We analyze the previously measured performance of a set of gallium nitride based laser diodes emitting ultraviolet light between 360 nm and 380 nm wavelength. The wavelength variation was accomplished by varying the indium content of the InGaN quantum wells which are embedded in AlInGaN barriers. The experiments revealed a strong increase in threshold current with shorter wavelength. Our analysis of this behavior utilizes advanced numerical laser simulation. General models for quaternary AlInGaN material properties are developed and result in good agreement between simulation and measurement. The measured rise in threshold current with shorter wavelength is found to have two main reasons. The first reason is the increased absorption of ultraviolet light inside the laser, mainly within p-doped layers. The second mechanism contributing to the performance deterioration is the leakage of carriers from the active region. In particular, the hole leakage is found to strongly increase with lower indium mole fraction of the quantum well (shorter wavelength), due to the reduced valence band offset.
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Joachim Piprek, Hans Wenzel, and Michael Kneissl "Analysis of wavelength-dependent performance variations of GaN-based ultraviolet lasers", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660H (12 October 2007);

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