25 September 2007 Optical triode with quantum dot semiconductor optical amplifiers
Author Affiliations +
Semiconductor optical amplifiers (SOAs) having nano-sized quantum dot (QD) particles show attractive features such as the achievement of a steady temperature characteristic, low power consumption, and a high-speed response to the input signal. QD active layers were designed to 15 stacks of InAs QDs, AlGaAs/GaAs double hetero structure. QD-SOAs were fabricated for optical triode that can be used with a 1.3 μm band. Modulation results extracted by input, control and output waveforms support the fact that cross-gain modulation and negative feedback amplification effect can be strongly contributed to obtain essential factors for future application such as dramatical baseline suppression of output signal and satisfying high modulation. Optical triode revealed inverted type characteristics that high output power can readily obtained by be increased quite small amount of input power while output power rarely change though input power increase high. Fulfillment of far more upgraded stable high-speed bit rate was completed by optical triode improved by QD-SOA and it's containing cross-gain modulation effect. 40 Gbps performance optical triode will be the accelerator for realization of the functions of regeneration, reshaping, multiple-wavelength processing, wavelength conversion, and demultiplexing of high-bit rate patterned optical signals.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jae-Hoon Huh, Jae-Hoon Huh, Yasuhiko Kuroki, Yasuhiko Kuroki, Sayaka Maki, Sayaka Maki, Yoshinobu Maeda, Yoshinobu Maeda, } "Optical triode with quantum dot semiconductor optical amplifiers", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660I (25 September 2007); doi: 10.1117/12.731385; https://doi.org/10.1117/12.731385

Back to Top