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15 October 2007 Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared
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Proceedings Volume 6771, Advanced Photon Counting Techniques II; 67710P (2007)
Event: Optics East, 2007, Boston, MA, United States
Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alberto Tosi, Alberto Dalla Mora, Franco Zappa, and Sergio Cova "Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared", Proc. SPIE 6771, Advanced Photon Counting Techniques II, 67710P (15 October 2007);

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