15 October 2007 High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength
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Proceedings Volume 6771, Advanced Photon Counting Techniques II; 677114 (2007); doi: 10.1117/12.752683
Event: Optics East, 2007, Boston, MA, United States
Abstract
A 4H-SiC SPAD with an off-mesa bonding pad operating at 280nm is presented in this paper, with a low dark count rate of 14kHz and 27kHz at single photon detection efficiency of 3.3% and 4.5%, respectively. The device has a low breakdown voltage of 117V and a low dark current of 17fA, 49fA and 147fA at 50%, 90%, and 95% of breakdown voltage, respectively. The quantum efficiency is measured to be 28% (32%) at 280nm (270nm) with a UV to visible rejection ratio >1400 (>1600).
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Xiaobin Xin, Jun Hu, Petre Alexandove, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok-Keong Lew, Rachael Myers-Ward, Charles Eddy, "High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength", Proc. SPIE 6771, Advanced Photon Counting Techniques II, 677114 (15 October 2007); doi: 10.1117/12.752683; https://doi.org/10.1117/12.752683
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KEYWORDS
Silicon carbide

Quantum efficiency

Ultraviolet radiation

Single photon

Silicon

Metals

Solar radiation

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