15 October 2007 High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength
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Proceedings Volume 6771, Advanced Photon Counting Techniques II; 677114 (2007) https://doi.org/10.1117/12.752683
Event: Optics East, 2007, Boston, MA, United States
Abstract
A 4H-SiC SPAD with an off-mesa bonding pad operating at 280nm is presented in this paper, with a low dark count rate of 14kHz and 27kHz at single photon detection efficiency of 3.3% and 4.5%, respectively. The device has a low breakdown voltage of 117V and a low dark current of 17fA, 49fA and 147fA at 50%, 90%, and 95% of breakdown voltage, respectively. The quantum efficiency is measured to be 28% (32%) at 280nm (270nm) with a UV to visible rejection ratio >1400 (>1600).
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaobin Xin, Xiaobin Xin, Jun Hu, Jun Hu, Petre Alexandove, Petre Alexandove, Jian H. Zhao, Jian H. Zhao, Brenda L. VanMil, Brenda L. VanMil, D. Kurt Gaskill, D. Kurt Gaskill, Kok-Keong Lew, Kok-Keong Lew, Rachael Myers-Ward, Rachael Myers-Ward, Charles Eddy, Charles Eddy, } "High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength", Proc. SPIE 6771, Advanced Photon Counting Techniques II, 677114 (15 October 2007); doi: 10.1117/12.752683; https://doi.org/10.1117/12.752683
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