Paper
10 September 2007 Stimulated emission and emission efficiency enhancement in nanopatterned silicon
Author Affiliations +
Abstract
1.278μm laser emission has been observed in a SOI structure which has been nanopatterned to contain an array of nanopores. The optical transition is identified to be associated with phononless recombination mediated by the bistable, carbon-related G center. The present work is focused on increasing the luminescence intensity from nanopatterned Si by increasing the number of G centers present in the material. The G center density is increased by increasing the concentration of substitutional atoms in the lattice prior to nanopatterning. To this end, solid-phase epitaxial regrowth of carbon-rich silicon is utilized in order to take advantage of the increased solid solubility of carbon in silicon at the interface between crystalline and amorphous solid silicon.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Efraim Rotem, Jeffrey M. Shainline, and Jimmy M. Xu "Stimulated emission and emission efficiency enhancement in nanopatterned silicon", Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750I (10 September 2007); https://doi.org/10.1117/12.733312
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Nanostructures

Silicon carbide

Carbon

Crystals

Luminescence

Solids

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