Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays

D. L. Huffaker; G. Balakrishnan; A. Jallipalli; M. N. Kutty; S. H. Huang; L. R. Dawson

doi:10.1117/12.737224

10 September 2007 Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays

D. L. Huffaker, G. Balakrishnan, A. Jallipalli, M. N. Kutty, S. H. Huang, L. R. Dawson

Proceedings Volume 6775, Active and Passive Optical Components for Communications VII; 67750L (2007) https://doi.org/10.1117/12.737224
Event: Optics East, 2007, Boston, MA, United States

Abstract

We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pure 90° dislocations. We demonstrate the simultaneous formation of this interfacial misfit dislocation (IMF) array along with antiphase domain suppression in the growth of AlSb on 5° miscut Si (001) substrate. The lomer dislocation spacing in the IMF (~ 3.46 nm) corresponds to the 13% mismatch between AlSb and Si and is also well matched to the step length of the 5° miscut Si (001) substrate. The resulting bulk material has both very low defect density (~7 × 105/cm²) and very low APD density (~ 103/cm²) confirmed by transmission electron and atomic force microscope images. The GaSb QW based laser diodes are grown on this high quality AlSb layer and the resulting devices operate at 77 K under pulsed conditions (2 μsec pulse-width and a 0.1% duty cycle) with an emission wavelength of 1.54 μm and a threshold current density of 2 kA/cm² for a 100 μm x 2mm device. The maximum peak power from the device is ~ 20 mWatts.

Citation Download Citation

D. L. Huffaker, G. Balakrishnan, A. Jallipalli, M. N. Kutty, S. H. Huang, and L. R. Dawson "Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays", Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750L (10 September 2007); https://doi.org/10.1117/12.737224

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