10 September 2007 Recent progress in self-assembled quantum-dot optical devices
Author Affiliations +
Abstract
Low dimensional structures (LDS) form a major new branch of physics research. They are semiconductor structures, which have such a small scale in one or two spatial dimensions that their electronic properties are significantly different from the same material in bulk form. These properties are changed by quantum effects. Throughout the world there is increasing interest in the preparation, study and application of LDS. Their investigation has revitalised condensed matter science, in particular semiconductor materials. These complex LDS offer device engineers new design opportunities for tailor-made new generation electronic and photonic devices. New crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour (MOCVD) deposition have made it possible to produce such LDS in practice. These sophisticated technologies for the growth of high quality epitaxial layers of compound semiconductor materials on single crystal semiconductor substrates are becoming increasingly important for the development of the semiconductor electronics industry. This article is intended to convey the flavour of the subject by focussing on the technology and applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Henini, M. Henini, "Recent progress in self-assembled quantum-dot optical devices", Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 677905 (10 September 2007); doi: 10.1117/12.731733; https://doi.org/10.1117/12.731733
PROCEEDINGS
14 PAGES


SHARE
RELATED CONTENT

Novel nanostructures quantum dot based devices
Proceedings of SPIE (September 09 2007)
Quantum dot lasers: from promise to reality
Proceedings of SPIE (July 13 2000)
Fabrication of III-V semiconductor quantum dots
Proceedings of SPIE (September 02 2009)
High-power high-efficiency laser diodes at JDSU
Proceedings of SPIE (February 06 2007)

Back to Top