High performance long wavelength quantum dot lasers on GaAs

P. Bhattacharya; Z. Mi

doi:10.1117/12.731791

10 September 2007 High performance long wavelength quantum dot lasers on GaAs

P. Bhattacharya, Z. Mi

Proceedings Volume 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV; 677908 (2007) https://doi.org/10.1117/12.731791
Event: Optics East, 2007, Boston, MA, United States

Abstract

We have investigated the molecular beam epitaxial growth and characteristics of long wavelength InAs pseudomorphic and metamorphic quantum dot lasers grown on GaAs. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit J_th=180 A/cm², T₀=∞, dg/dn≈1×10^-14 cm², f_-3dB =11 GHz, chirp of 0.1 Å and zero α-parameter. By detailed investigation of the growth kinetics and characteristics of metamorphic quantum dot heterostructures on GaAs, we have demonstrated high performance 1.5 μm InAs metamorphic quantum dot lasers on GaAs that are characterized J_th~60A/cm², T₀≈620K, and near-zero α-parameter and chirp (~ 0.1 Å).

Citation Download Citation

P. Bhattacharya and Z. Mi "High performance long wavelength quantum dot lasers on GaAs", Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 677908 (10 September 2007); https://doi.org/10.1117/12.731791

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