10 September 2007 InP nanowire photodetectors heteroepitaxially grown between silicon electrodes
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We demonstrate an InP nanowire based photodetector laterally integrated between two (111)-oriented vertical silicon surfaces. The nanowires are grown through a simple single step chemical vapor deposition (CVD) process using gold nanoparticles as catalyst with in-situ p-doping and have been heteroepitaxially bridged between a pair of prefabricated p-doped Si electrodes. Nonlinear current-voltage characteristics are observed. Although this nonlinearity resembles a back-to-back rectifying profile it originates from space-charge limited conductivity of the nanowires. DC photoelectric characteristics of the device were measured under optical illumination (λ=630 nm) above the bandgap energy (1.34 eV or ~925 nm at room temperature) of InP. The variation in photoconductance with varying input optical power demonstrates high sensitivity of the device to optical illumination.
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Ataur Sarkar, Ataur Sarkar, Anurag Chaudhry, Anurag Chaudhry, V. J. Logeeswaran, V. J. Logeeswaran, Sungsoo Yi, Sungsoo Yi, M. Saif Islam, M. Saif Islam, } "InP nanowire photodetectors heteroepitaxially grown between silicon electrodes", Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 67790K (10 September 2007); doi: 10.1117/12.752513; https://doi.org/10.1117/12.752513

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