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23 December 1986 Intrinsic Stress Characteristics Of Gradient-Index Thin Film Structures
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Abstract
ZnS-Ge and ZnSe-Ge thin film mixtures formed by codeposition (analog) and by sequential layering of alternate materials (digital) were characterized for stress and crystalline structure. The stress in sequentially deposited films varied linearly with composition between the stress values of the pure materials (compressive for ZnS and ZnSe and tensile for Ge). The stress in codeposited ZnS-Ge films deviated from linearity near the tensile-compressive crossover composition and at the ZnS-rich end. Films with 5 - 25% by weight (w/o) Ge composition had lower stress and much higher crystallinity than pure ZnS films. The crystallinity of ZnSe-Ge films on the other hand decreased upon addition of the Ge while the stress exhibited a slight increase at - 10 w/o Ge. These results have significant implications for the design of gradient-index thin film structures.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H Sankur, W J Gunning, and J F Flintoff "Intrinsic Stress Characteristics Of Gradient-Index Thin Film Structures", Proc. SPIE 0678, Optical Thin Films II: New Developments, (23 December 1986); https://doi.org/10.1117/12.939541
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