Application of GeO2-doped silica waveguides in optical modulator

Jiu-sheng Li; Jian-rui Li

doi:10.1117/12.741794

21 November 2007 Application of GeO₂-doped silica waveguides in optical modulator

Jiu-sheng Li, Jian-rui Li

Author Affiliations +

Proceedings Volume 6781, Passive Components and Fiber-based Devices IV; 67813N (2007) https://doi.org/10.1117/12.741794
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

A novel electro-optical modulator using GeO₂ doped silica waveguides based on silicon substrate is proposed. The modulator is analyzed and designed with the finite element method. The simulation results show that the designed modulator operates with a 3dB optical bandwidth of 56.6GHz, a half-wave voltage of 8.9V and a characteristic impedance of 51.8Ω at 1310nm wavelength. The presented modulator can be fabricated easily using Si-based very large-scale integrated technology and is very suitable for optoelectronic integrated circuits.

Citation Download Citation

Jiu-sheng Li and Jian-rui Li "Application of GeO₂-doped silica waveguides in optical modulator", Proc. SPIE 6781, Passive Components and Fiber-based Devices IV, 67813N (21 November 2007); https://doi.org/10.1117/12.741794

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