Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states

B. Witzigmann; S. Steiger; M. Tomamichel; R. Veprek; U. T. Schwarz

doi:10.1117/12.742462

Translator Disclaimer

19 November 2007 Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states

B. Witzigmann, S. Steiger, M. Tomamichel, R. Veprek, U. T. Schwarz

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820R (2007) https://doi.org/10.1117/12.742462
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

In this contribution, a detailed analysis of optical gain in InGaN/GaN quantum structures with Indium content of 10% and 20% is presented. Experimental data are obtained from Hakki-Paoli characterization of edge-emitting Fabry-Perot lasers. A gain model that includes many-particle effects on a microscopic level, as well as combined quantum-well and quantum-dot density of states, is used to explain the experimental findings. Inhomogeneous broadening arising from local Indium clusters is included via a statistical fluctuation of the electronic density of states. Excellent agreement is obtained for the characteristic gain spectra from structures emitting at 405nm (10% In content) and 470nm (20% In content), and a systematic analysis of the microscopic physics shows signature of quantum-dot states.

Citation Download Citation

B. Witzigmann, S. Steiger, M. Tomamichel, R. Veprek, and U. T. Schwarz "Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820R (19 November 2007); https://doi.org/10.1117/12.742462

ACCESS THE FULL ARTICLE