Photonic buffer memory based on polarization bistability in VCSELs

Hitoshi Kawaguchi

doi:10.1117/12.754538

12 December 2007 Photonic buffer memory based on polarization bistability in VCSELs

Hitoshi Kawaguchi

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678205 (2007) https://doi.org/10.1117/12.754538
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

A novel photonic buffer memory with a shift register function is proposed. The buffer memory consists of a two-dimensional array of polarization bistable vertical-cavity surface-emitting lasers (VCSELs), in which the bit state of the optical signal, "0" or "1" is stored as a lasing linear polarization state of 0 or 90°. Input data stored as the polarization states of the first VCSEL are transferred to the polarization states of the second VCSEL. In our experiment using 980 nm VCSELs, 10 Gbit/s optical buffering, 2-bit optical buffering, and a shift register function have been successfully demonstrated.

Citation Download Citation

Hitoshi Kawaguchi "Photonic buffer memory based on polarization bistability in VCSELs", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678205 (12 December 2007); https://doi.org/10.1117/12.754538

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