13 December 2007 The spectral feature analysis of semiconductor thin disk laser
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820E (2007) https://doi.org/10.1117/12.742427
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power, the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger, the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs, This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun-feng He, Li Qin, Jun Li, Li-wen Cheng, Xue-mei Liang, Yong-qiang Ning, and Li-jun Wang "The spectral feature analysis of semiconductor thin disk laser", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820E (13 December 2007); doi: 10.1117/12.742427; https://doi.org/10.1117/12.742427

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