26 November 2007 Design and fabrication of a novel monothically integrated dual-wavelength tunable photodetector
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820H (2007) https://doi.org/10.1117/12.745353
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
The design and fabrication of a Monothically integrated dual-wavelength tunable photodetector are reported. The dual-wavelength character is realized by introducing a taper substrate. The photodetector operating on long wavelength is Monothically integrated by using heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on GaAs based GaAs/AlAs Fabry-Perot filter structure, which can be tuned by thermal-optic effect. High quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. The integrated device with a dual-peak distance of 7nm (1530nm,1537nm) , a wavelength tuning range of 5.0 nm, and a 3-dB bandwidth of 5.9 GHz was demonstrated, according with the theoretical simulation.
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Jihe Lv, Jihe Lv, Hui Huang, Hui Huang, Yongqing Huang, Yongqing Huang, Xiaomin Ren, Xiaomin Ren, Ang Miao, Ang Miao, Yiqun Li, Yiqun Li, Hongwei Du, Hongwei Du, Qi Wang, Qi Wang, "Design and fabrication of a novel monothically integrated dual-wavelength tunable photodetector", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820H (26 November 2007); doi: 10.1117/12.745353; https://doi.org/10.1117/12.745353
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