Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Yanli Zhao

doi:10.1117/12.745506

19 November 2007 Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Yanli Zhao

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820I (2007) https://doi.org/10.1117/12.745506
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (V_br). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.

Citation Download Citation

Yanli Zhao "Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820I (19 November 2007); https://doi.org/10.1117/12.745506

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