19 November 2007 On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820J (2007) https://doi.org/10.1117/12.741526
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Abstract: We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.
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Shou-li Zhou, De-ping Xiong, Ya-li Qin, Hai-lin Cui, Yin-zhe Chong, Miao Ang, Ji-he Lv, Jun-hua Gao, "On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820J (19 November 2007); doi: 10.1117/12.741526; https://doi.org/10.1117/12.741526
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