19 November 2007 InP-based long wavelength VCSELs: their characteristics and applications
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820M (2007) https://doi.org/10.1117/12.754338
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 3 mW and ~1 mW powers at both 1.3 μm and 1.55 μm have been achieved at 20 °C and 85 °C, respectively. Tests for various applications have been performed with our 1.3 and 1.55 μm VCSELs. Error free transmission over 10 km under 10 Gbit/s, 85°C has been demonstrated with both 1.3 and 1.55 μm VCSELs. The effect of electrical dispersion compensation (EDC) with 1.55 μm VCSELs has been confirmed for transmission of medium range data transmission. Radio signal transmission with low error vector magnitude by 1.3 μm VCSELs has been achieved at 2.4 and 5 GHz-band radio frequency.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Nishiyama, N. Nishiyama, C. Caneau, C. Caneau, M. Sauer, M. Sauer, A. Kobyakov, A. Kobyakov, C. E. Zah, C. E. Zah, } "InP-based long wavelength VCSELs: their characteristics and applications", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820M (19 November 2007); doi: 10.1117/12.754338; https://doi.org/10.1117/12.754338


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