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19 November 2007 Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820R (2007) https://doi.org/10.1117/12.742462
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
In this contribution, a detailed analysis of optical gain in InGaN/GaN quantum structures with Indium content of 10% and 20% is presented. Experimental data are obtained from Hakki-Paoli characterization of edge-emitting Fabry-Perot lasers. A gain model that includes many-particle effects on a microscopic level, as well as combined quantum-well and quantum-dot density of states, is used to explain the experimental findings. Inhomogeneous broadening arising from local Indium clusters is included via a statistical fluctuation of the electronic density of states. Excellent agreement is obtained for the characteristic gain spectra from structures emitting at 405nm (10% In content) and 470nm (20% In content), and a systematic analysis of the microscopic physics shows signature of quantum-dot states.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Witzigmann, S. Steiger, M. Tomamichel, R. Veprek, and U. T. Schwarz "Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820R (19 November 2007); doi: 10.1117/12.742462; https://doi.org/10.1117/12.742462
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