19 November 2007 Design and fabrication of high-performance InGaAsP/InP electroabsorption modulator
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820U (2007) https://doi.org/10.1117/12.742189
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Electroabsorption modulator has been widely used in modern optical fiber communication system and analog RF link system. In this paper, the design of a high-performance EAM with low coupling loss, high saturation power and high speed was demonstrated, which include the waveguide, active core and electrodes. A novel EAM with large optical cavity (LOC) waveguide structure, intrastep quantum well (IQW) active core and traveling wave electrodes was presented and fabricated successfully. Our results show that the LOC waveguide effectively improved the optical profile of EAM and reduced the coupling loss. The obtained traveling wave EAM achieved 21dBm saturation power and 23GHz 3-dB bandwidth.
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Hua Yang, Hua Yang, Mee Koy Chin, Mee Koy Chin, Desmond C.S. Lim, Desmond C.S. Lim, Jingtao Zhou, Jingtao Zhou, Shuhying Lee, Shuhying Lee, Yuanbing Cheng, Yuanbing Cheng, HongLiang Zhu, HongLiang Zhu, Weixi Chen, Weixi Chen, } "Design and fabrication of high-performance InGaAsP/InP electroabsorption modulator", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820U (19 November 2007); doi: 10.1117/12.742189; https://doi.org/10.1117/12.742189
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